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ROHM Semiconductor has launched the innovative TSC3PAK package for SiC MOSFETs, merging superior thermal management with automated assembly. This advancement promises to redefine efficiency and design flexibility in electric vehicles and industrial power systems.
ROHM Semiconductor has launched the innovative TSC3PAK package for SiC MOSFETs, merging superior thermal management with automated assembly. This advancement promises to redefine efficiency and design flexibility in electric vehicles and industrial power systems.
Kyoto, Japan – June 10, 2026 – The power semiconductor industry has reached a major milestone with the launch of ROHM Semiconductor's latest packaging breakthrough. This groundbreaking development, with mass production commencing in June 2026, promises to redefine efficiency, reliability, and design flexibility across critical applications, from electric vehicles (xEVs) to sophisticated industrial equipment. [2]
As power conversion architectures shrink, thermal management has become the primary bottleneck to unlocking wide-bandgap semiconductor capabilities. ROHM's new TSC3PAK package directly addresses this challenge, offering a solution that combines the superior heat dissipation of traditional through-hole packages with the automation benefits of surface-mount technology. [2] By moving the thermal interface away from the printed circuit board (PCB) laminate and directly onto an upper-mounted heatsink, this package redefines the mechanics of discrete power design.
Thermal Management Definition: The strategic, system-level design process of controlling and mitigating heat generated by semiconductor switches to maintain safe junction temperatures, prevent degradation, and extend the system's operational lifespan.
Thermal management is the process of controlling heat generated by electronic devices to maintain their functionality, ensure optimal performance, and extend their operational lifespan. [7] Without effective thermal strategies, the heat produced by power electronic devices can accumulate, leading to elevated temperatures that degrade component performance, reduce longevity, and significantly increase the risk of failure. [9]
Power electronic components, such as MOSFETs and IGBTs, generate heat primarily from conduction and switching losses. As temperatures rise, the electrical characteristics of these components can change, often resulting in decreased efficiency and higher power loss. [9]
This behavior is highly critical in high-power setups. For instance, the on-resistance of MOSFETs typically increases with temperature, exacerbating conduction losses and potentially leading to thermal runaway. When localized silicon or silicon carbide structures heat up, their internal carrier mobility drops, driving up electrical resistance ($R_{DS(on)}$), which generates even more heat. This underscores why thermal management is not merely an afterthought but a foundational element directly impacting a system's reliability, efficiency, and longevity. Unmitigated thermal gradients can trigger solder-joint fatigue, package encapsulation cracks, and total die destruction. A study from EMA Design Automation in November 2025 indicated that modern power electronics operating without proper thermal management can experience failure rates up to ten times higher than those of properly cooled systems.
SiC MOSFET Definition: Advanced power semiconductor switches that leverage Silicon Carbide—a compound wide-bandgap material—to execute high-speed, high-voltage switching at exceptional efficiencies far beyond legacy silicon's limits.
These devices are pivotal in modern power conversion due to their superior thermal conductivity, lower energy losses, and higher operational voltage, frequency, and temperature capabilities. [11] Compared to standard Silicon (Si), Silicon Carbide has a much wider bandgap (approx. 3.26 eV versus 1.1 eV for silicon). This expanded bandgap allows SiC switches to withstand significantly higher electric fields before breakdown occurs.
SiC MOSFETs boast a breakdown electric field ten times higher and thermal conductivity three times greater than silicon, making them ideal for high-efficiency power conversion circuits in demanding environments. These intrinsic material attributes enable the fabrication of thinner drift layers for a given voltage rating, lowering conduction losses. Furthermore, SiC exhibits negligible reverse recovery charge, which drastically cuts dynamic switching losses. Consequently, power conversion topologies can operate at much higher frequencies, allowing engineers to reduce the footprint of passive components like inductors and capacitors. This has made them indispensable in the rapid electrification of the automotive sector and the drive for greater efficiency in industrial and renewable energy applications. [11]
TSC3PAK Definition: A compact, surface-mount discrete power package designed with a molded top-side thermal interface, enabling high-speed automated placement while optimizing thermal transfer directly to an upper-mounted heatsink.
ROHM's new TSC3PAK package is a compact solution, measuring 14.00 × 18.58 × 3.50mm, specifically designed to address the evolving challenges of thermal dissipation and manufacturing efficiency for SiC MOSFETs. [3] This package features a structural paradigm shift in high-power semiconductor assembly. Its defining feature is a top-side heat dissipation structure, which places the heat-dissipating surface on the package's upper side, allowing for direct heat transfer to a heatsink. [14]
Traditional Bottom-Side Cooling: ROHM TSC3PAK Top-Side Cooling:
+-----------------------+ +=====[ HEATSINK ]=====+
| SiC Die | | Thermal Interface |
+-----------------------+ +----------------------+
| PCB FR4 Substrate | < Bottleneck | Molded Package Lid |
+-----------------------+ +----------------------+
| Thermal Interface | | SiC Die |
+-----------------------+ +----------------------+
+=====[ HEATSINK ]=====+ | PCB Substrate |
+----------------------+
Traditionally, high-power systems have relied on through-hole components like TO-247 packages, which are known for high thermal dissipation limits but present layout challenges. However, these packages necessitate manual mounting processes and possess a form factor that complicates achieving a lower overall profile. [2] Surface-mount devices, compatible with automated assembly, have been gaining traction, but often at the expense of thermal performance. [2] This is because standard SMD packages dump heat downward through the PCB, which has low thermal conductivity.
The TSC3PAK brilliantly bridges this gap, delivering heat dissipation performance comparable to conventional through-hole technology like TO-247, all within a surface-mount package. [2] By taking the thermal path upward, system designers can mount heatsinks directly onto the top-side metal tab. This innovation dramatically reduces mounting costs and enhances manufacturing consistency by enabling automated PCB assembly, a significant advantage over manual through-hole mounting. [3]
High-voltage discrete packages must also satisfy strict regulatory guidelines for creepage and clearance. Furthermore, the TSC3PAK incorporates ROHM's proprietary groove structure, which ensures a class-leading creepage distance of 6.66mm. [2] This unique molded shape keeps the electrical insulation distance wide despite the compact 14.00 × 18.58mm frame. It permits safe compatibility with high-voltage operating conditions, including 1200V peak AC voltage under standard Pollution Degree 2 environments. This feature is crucial for robust insulation design in high-voltage applications, contributing to both reduced costs and enhanced reliability. [2]
Inside this advanced encapsulation, the active semiconductor technology delivers impressive performance. Products leveraging the new TSC3PAK package integrate ROHM's 4th Generation SiC MOSFETs, renowned for their low ON resistance and high-speed switching characteristics. [2] This combination significantly reduces switching losses during power conversion, leading to greater application efficiency and lower power consumption. [3]
| Feature | Conventional Bottom-Side/Through-Hole Cooling | ROHM TSC3PAK Top-Side Cooling | Benefit |
|---|---|---|---|
| Heat Dissipation Path | Heat passes through the PCB to a heatsink, creating a thermal bottleneck. [15] | Direct heat transfer from the SiC die through the package lid to an external heatsink. [15] | Superior Thermal Management: Shortens thermal path, reduces junction-to-sink thermal resistance (Rth,j–to–sink), and lowers operating junction temperatures. |
| Mounting Process | Often requires manual insertion and soldering (for through-hole) or relies on PCB for thermal transfer (for bottom-side surface mount). [2] | Compatible with automated surface-mount technology (SMT). [2] | Manufacturing Efficiency: Enables high-speed automated assembly, reducing production costs and improving consistency. [3] |
| PCB Thermal Loading | Significantly loads the PCB thermally, limiting component density and requiring complex board designs for heat spreading. [15] | Minimizes heat transfer into the PCB. | Increased Power Density & Design Flexibility: Allows for denser board layouts, smaller enclosures, and more compact designs. [16] |
| Efficiency | Higher device temperatures can increase Rds(on) and switching losses. [9] | Lower device temperatures reduce Rds(on) and switching losses. | Improved System Efficiency: Maintains lower junction temperatures, leading to reduced conduction and switching losses, thus raising converter efficiency. |
| Reliability | Elevated junction temperatures and thermal cycling stress can lead to failure modes like solder fatigue and bond wire degradation. [7] | Reduced junction temperatures (Tj) and moderated thermal cycling stress. | Extended Reliability: Mitigates common failure modes, improving Mean Time Between Failures (MTBF) and overall system lifetime. |
| Voltage Handling | Standard insulation requirements. | Proprietary groove structure provides 6.66mm creepage distance, accommodating 1200V AC peak voltage in Pollution Degree 2. [2] | Enhanced High-Voltage Safety: Enables safe insulation design in high-voltage applications, contributing to increased reliability. [2] |
| EMI | Can generate significant EMI noise due to larger current loops on the PCB. | Thermal path moved off the PCB, minimizing current loop size. | Reduced Electromagnetic Interference (EMI): Leads to significantly lower overall EMI, crucial for sensitive electronic environments. |
Application-Level Optimization Definition: The practice of aligning semiconductor physical profiles and thermal properties to specific operational constraints, ensuring peak performance within automotive and industrial settings.
The introduction of the TSC3PAK package is particularly timely, aligning with the accelerating adoption of SiC devices across several high-growth sectors. [5] Modern electronics demand high efficiency, making thermal transfer mechanisms essential to power conversion design.
In next-generation transport, power density dictates performance limits. In the automotive sector, SiC devices are expanding beyond main inverters to critical power conversion circuits such as onboard chargers (OBCs) and electric compressors. [5] The goal is to improve charging speed, extend cruising range, and enhance overall system efficiency. [5]
By implementing top-side cooling, EV engineers can design smaller, lighter onboard charging systems. The TSC3PAK's ability to combine high heat dissipation with automated mounting will enable automotive manufacturers to create more compact, reliable, and efficient EV components. [5] Moving heat to an isolated top plate allows for direct liquid-cooling configurations without risking PCB damage. For example, a November 2024 article highlighted that highly efficient charging circuits with a high cooling rate are essential for fast and safe battery charging in electric vehicles.
Industrial hardware relies on thermal stability to maintain uptime. High-performance server power supplies, PV inverters, and other industrial equipment demand high-efficiency operation and robust thermal management. [5] Under continuous loads, legacy modules can experience thermal cycling stress, which reduces system lifespan. The TSC3PAK facilitates the design of more compact and reliable power supplies and inverters, crucial for the increasing deployment of high-performance servers driven by AI and big data processing, as well as for advancing renewable energy infrastructure. [3] Keeping components cool improves energy efficiency, lowering operational overhead for data centers and solar installations.
Vertical Integration Definition: An end-to-end manufacturing and development model where a single company controls every phase of production—from raw silicon carbide wafer growth to chip design, packaging, and testing.
ROHM has long been at the forefront of SiC technology development, with an integrated production system spanning from wafer fabrication to packaging and quality control. [12] This level of vertical integration gives ROHM total oversight of materials and manufacturing. The company has aggressively pivoted towards power semiconductors, securing significant SiC design-wins in EV inverters and fast-charging applications, while continuously scaling its production capacity.
Kazuhide Ino, head of ROHM's power device business and managing executive officer, has acknowledged the rapid pace of development in the SiC market and highlighted ROHM's strategy to maintain competitiveness. To lead in this highly competitive sector, the company focuses on shortening product development cycles. ROHM aims to shorten its technology upgrade cycle from the traditional 3-4 years to under 2 years by simultaneously developing multiple generations of SiC products.
The company is targeting mass production of its 5th Generation SiC MOSFETs by 2025, with a 30% lower on-resistance at an operating temperature of 175°C compared to 4th Generation products. This shift will reduce power losses in demanding automotive and industrial systems. This continuous innovation, coupled with a transition to 8-inch (200mm) SiC wafers, is projected to further reduce costs and boost efficiency. [13] Transitioning to 8-inch wafers increases yield per run, lowering unit costs.
These market efforts align with industry growth projections. Valued at approximately USD 3.01 billion in 2025, it is projected to skyrocket to around USD 34.71 billion by 2035, exhibiting a robust Compound Annual Growth Rate (CAGR) of 27.7% from 2026 to 2035. This growth is predominantly fueled by the surging demand for energy-efficient power electronics in EVs, renewable energy systems, and industrial automation. [11] ROHM's aggressive capacity expansion and continuous product innovation, like the TSC3PAK, position it to outpace this market growth and achieve its goal of over 30% market share.
The launch of ROHM's TSC3PAK top-side cooling package is a major development in discrete packaging design. By combining high thermal performance, automated SMT compatibility, and robust high-voltage insulation, it sets a new standard for SiC packaging. This innovation allows engineers to develop more compact, highly efficient power converters for automotive and industrial applications. As ROHM continues to advance its SiC technologies, the industry moves closer to a highly efficient and sustainable electrified future.
The ROHM TSC3PAK package is precisely dimensioned at 14.00 × 18.58 × 3.50mm, offering a compact footprint designed for modern power electronics applications. [2] This size, combined with its top-side cooling structure, allows for high power density in space-constrained designs, making it ideal for automotive and industrial uses where component size is critical.
Top-side cooling in the TSC3PAK directly transfers heat from the SiC die through the package lid to an external heatsink, shortening the thermal path and significantly reducing thermal resistance compared to traditional bottom-side cooling. [15] Traditional bottom-side components rely on the PCB to transfer heat, which limits overall dissipation and thermal efficiency. The TSC3PAK's approach improves thermal homogeneity and allows for automated mounting, a key advantage over manual through-hole packages. [14]
The TSC3PAK package is primarily designed to enhance power conversion circuits in electric vehicles (xEVs), including onboard chargers (OBCs) and electric compressors, by improving efficiency and reliability. [5] It also provides substantial benefits for industrial equipment, such as high-performance server power supplies and photovoltaic (PV) inverters, where superior thermal management and automated assembly are crucial for high-efficiency operation and system miniaturization. [5]
The TSC3PAK incorporates a proprietary groove structure that ensures a class-leading creepage distance of 6.66mm. [2] This design feature enables the package to safely accommodate an AC peak voltage of 1200V in a Pollution Degree 2 environment. [2] This robust voltage handling capability is vital for enabling safe insulation design in demanding high-voltage applications, contributing to both system reliability and reduced mounting costs. [2]
Featured image by Umberto on Unsplash
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